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Microchip Technology MSC400SMA330B4N

Part No.:
MSC400SMA330B4N
Manufacturer:
Microchip Technology
Category:
FETs, MOSFETs
Package:
TO-247-4
Description:
MOSFET SIC 3300V 400 MOHM TO-247
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Unit Price:$0

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MSC400SMA330B4N Information

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
TO-247-4
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
3300 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
520mOhm @ 5A, 20V
Vgs(th) (Max) @ Id:
2.97V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 20 V
Vgs (Max):
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
579 pF @ 2.4 kV
FET Feature:
-
Power Dissipation (Max):
131W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4
Image MSC400SMA330B4N
Part Number MSC400SMA330B4N
Manufacturer Microchip Technology
Series -
Package/Case TO-247-4
Packaging Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 3300 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 520mOhm @ 5A, 20V
Vgs(th) (Max) @ Id 2.97V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 579 pF @ 2.4 kV
FET Feature -
Power Dissipation (Max) 131W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
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