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Microchip Technology MSC035SMA070SCT/R

Part No.:
MSC035SMA070SCT/R
Manufacturer:
Microchip Technology
Category:
FETs, MOSFETs
Package:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Description:
MOSFET SIC 700 V 35 MOHM PSMT
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MSC035SMA070SCT/R Information

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Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
mSiC™
Package/Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
Rds On (Max) @ Id, Vgs:
44mOhm @ 30A, 20V
Vgs(th) (Max) @ Id:
5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:
93 nC @ 20 V
Vgs (Max):
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
1806 pF @ 700 V
FET Feature:
-
Power Dissipation (Max):
276W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-268
Image MSC035SMA070SCT/R
Part Number MSC035SMA070SCT/R
Manufacturer Microchip Technology
Series mSiC™
Package/Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 44mOhm @ 30A, 20V
Vgs(th) (Max) @ Id 5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1806 pF @ 700 V
FET Feature -
Power Dissipation (Max) 276W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-268
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