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IXYS IXTA2N100-TRL

Part No.:
IXTA2N100-TRL
Manufacturer:
IXYS
Category:
FETs, MOSFETs
Package:
-
Description:
MOSFET N-CH TO263
Quantity:

Unit Price:$0

Ext Price:$0

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IXTA2N100-TRL Information

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Product attributes
Attribute value
Manufacturer:
IXYS
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-
Image IXTA2N100 IXTA2N100-TRL
Part Number IXTA2N100 IXTA2N100-TRL
Manufacturer IXYS IXYS
Series - -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB -
Packaging Tube Tape & Reel (TR)
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 1000 V -
Current - Continuous Drain (Id) @ 25°C 2A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 825 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 100W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Grade - -
Qualification - -
Mounting Type Surface Mount -
Supplier Device Package TO-263AA -
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The following parts include "IXTA2N100-TRL" in Silicon Labs IXTA2N100-TRL.

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