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Infineon Technologies IPU80R4K5P7AKMA1

Part No.:
IPU80R4K5P7AKMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Description:
MOSFET N-CH 800V 1.5A TO251-3
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Unit Price:$0

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IPU80R4K5P7AKMA1 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id:
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:
4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 500 V
FET Feature:
-
Power Dissipation (Max):
13W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO251-3-21
Image IPU80R4K5P7AKMA1
Part Number IPU80R4K5P7AKMA1
Manufacturer Infineon Technologies
Series CoolMOS™
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
FET Feature -
Power Dissipation (Max) 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-21
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