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Infineon Technologies IPS70R600P7SAKMA1

Part No.:
IPS70R600P7SAKMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Description:
MOSFET N-CH 700V 8.5A TO251-3
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Unit Price:$0

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IPS70R600P7SAKMA1 Information

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Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:
10.5 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
364 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
43W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO251-3
Image IPS70R600P7SAKMA1
Part Number IPS70R600P7SAKMA1
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 364 pF @ 400 V
FET Feature -
Power Dissipation (Max) 43W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
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