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Infineon Technologies IPN60R600PFD7SATMA1

Part No.:
IPN60R600PFD7SATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Description:
CONSUMER PG-SOT223-3
Quantity:

Unit Price:$0

Ext Price:$0

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IPN60R600PFD7SATMA1 Information

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Manufacturer:
Infineon Technologies
Series:
CoolMOS™ PFD7
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
8.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
344 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
7W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4
Image IPN60R600PFD7SATMA1
Part Number IPN60R600PFD7SATMA1
Manufacturer Infineon Technologies
Series CoolMOS™ PFD7
Package/Case TO-261-4, TO-261AA
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 344 pF @ 400 V
FET Feature -
Power Dissipation (Max) 7W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
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