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Infineon Technologies IPC70N04S5L4R2ATMA1

Part No.:
IPC70N04S5L4R2ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Description:
MOSFET N-CH 40V 70A 8TDSON-34
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Unit Price:$0

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IPC70N04S5L4R2ATMA1 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:
2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-34
Image IPC70N04S5L4R2ATMA1
Part Number IPC70N04S5L4R2ATMA1
Manufacturer Infineon Technologies
Series OptiMOS™
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-34
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