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Infineon Technologies IAUC41N06S5N102ATMA1

Part No.:
IAUC41N06S5N102ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Description:
MOSFET_)40V 60V) PG-TDSON-8
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Unit Price:$0

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IAUC41N06S5N102ATMA1 Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
47A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
10.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:
16.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1112.1 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
42W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-33
Image IAUC41N06S5N102ATMA1
Part Number IAUC41N06S5N102ATMA1
Manufacturer Infineon Technologies
Series OptiMOS™ 5
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 47A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 16.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1112.1 pF @ 30 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-33
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