Honeywell Aerospace HTNFET-D

Product attributes

Attribute value

Manufacturer:

Honeywell Aerospace

Series:

HTMOS™

Package/Case:

8-CDIP Exposed Pad

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55 V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

400mOhm @ 100mA, 5V

Vgs(th) (Max) @ Id:

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

4.3 nC @ 5 V

Vgs (Max):

10V

Input Capacitance (Ciss) (Max) @ Vds:

290 pF @ 28 V

FET Feature:

-

Power Dissipation (Max):

50W (Tj)

Operating Temperature:

-55°C ~ 225°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

8-CDIP-EP