GaNPower GPI65010DF56

Product attributes

Attribute value

Manufacturer:

GaNPower

Series:

-

Package/Case:

Die

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

10A

Drive Voltage (Max Rds On, Min Rds On):

6V

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

1.4V @ 3.5mA

Gate Charge (Qg) (Max) @ Vgs:

2.6 nC @ 6 V

Vgs (Max):

+7.5V, -12V

Input Capacitance (Ciss) (Max) @ Vds:

90 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die