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onsemi FQA62N25CPWD

Part No.:
FQA62N25CPWD
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
TO-3P-3, SC-65-3
Description:
POWER MOSFET, N-CHANNEL, QFET, 2
Quantity:

Unit Price:$0

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FQA62N25CPWD Information

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Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-3P-3, SC-65-3
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
35mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
6280 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
298W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PN
Image FQA62N25CPWD
Part Number FQA62N25CPWD
Manufacturer onsemi
Series -
Package/Case TO-3P-3, SC-65-3
Packaging Bulk
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6280 pF @ 25 V
FET Feature -
Power Dissipation (Max) 298W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3PN
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