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onsemi FDMS7682

Part No.:
FDMS7682
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Description:
MOSFET N-CH 30V 16A/22A 8PQFN
Quantity:

Unit Price:$0

Ext Price:$0

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FDMS7682 Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1885 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 33W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (5x6)
Image FDMS7682
Part Number FDMS7682
Manufacturer onsemi
Series PowerTrench®
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1885 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
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