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onsemi FDC640P_F095

Part No.:
FDC640P_F095
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET P-CH 20V 4.5A SUPERSOT6
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FDC640P_F095 Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
53mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
890 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SuperSOT™-6
Image FDC640P_F095
Part Number FDC640P_F095
Manufacturer onsemi
Series PowerTrench®
Package/Case SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 53mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
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