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Diodes Incorporated DMN3009SFG-7

Part No.:
DMN3009SFG-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Description:
MOSFET N-CH 30V 16A PWRDI3333
Quantity:

Unit Price:$0

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DMN3009SFG-7 Information

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Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
900mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8
Image DMN3009SFG-7 DMN3009SFGQ-7 DMN3009SFG-13 DMN3009SFGQ-13
Part Number DMN3009SFG-7 DMN3009SFGQ-7 DMN3009SFG-13 DMN3009SFGQ-13
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Series - - - -
Package/Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 45A (Tc) 16A (Ta), 45A (Tc) 16A (Ta), 45A (Tc) 16A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V 5.5mOhm @ 20A, 10V 5.5mOhm @ 20A, 10V 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 42 nC @ 10 V 42 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 15 V 2000 pF @ 15 V 2000 pF @ 15 V 2000 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 900mW (Ta) 900mW (Ta) 900mW (Ta) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - Automotive - Automotive
Qualification - AEC-Q101 - AEC-Q101
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package POWERDI3333-8 POWERDI3333-8 POWERDI3333-8 POWERDI3333-8
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