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Diodes Incorporated DMG4413LSS-13

Part No.:
DMG4413LSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET P-CH 30V 10.5A 8SOP
Quantity:

Unit Price:$0

Ext Price:$0

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DMG4413LSS-13 Information

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Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4965 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Image DMG4413LSS-13
Part Number DMG4413LSS-13
Manufacturer Diodes Incorporated
Series -
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4965 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SO
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