Cambridge GaN Devices CGD65B200S2-T13

Product attributes

Attribute value

Manufacturer:

Cambridge GaN Devices

Series:

ICeGaN™

Package/Case:

8-PowerVDFN

Packaging:

Cut Tape (CT)

Product Status:

Active

FET Type:

-

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

9V, 20V

Rds On (Max) @ Id, Vgs:

280mOhm @ 600mA, 12V

Vgs(th) (Max) @ Id:

4.2V @ 2.75mA

Gate Charge (Qg) (Max) @ Vgs:

1.4 nC @ 12 V

Vgs (Max):

+20V, -1V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

Current Sensing

Power Dissipation (Max):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-DFN (5x6)