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Nexperia USA Inc. BUK9M10-30EX

Part No.:
BUK9M10-30EX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SOT-1210, 8-LFPAK33 (5-Lead)
Description:
MOSFET N-CH 30V 54A LFPAK33
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BUK9M10-30EX Information

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Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SOT-1210, 8-LFPAK33 (5-Lead)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
7.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
12.2 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
1249 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
55W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK33
Image BUK9M10-30EX
Part Number BUK9M10-30EX
Manufacturer Nexperia USA Inc.
Series TrenchMOS™
Package/Case SOT-1210, 8-LFPAK33 (5-Lead)
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12.2 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1249 pF @ 25 V
FET Feature -
Power Dissipation (Max) 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package LFPAK33
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