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Alpha & Omega Semiconductor Inc. AOU4N60

Part No.:
AOU4N60
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Description:
MOSFET N-CH 600V 4A TO251-3
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AOU4N60 Information

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Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14.5 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
640 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
104W (Tc)
Operating Temperature:
-50°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251-3
Image AOU4N60
Part Number AOU4N60
Manufacturer Alpha & Omega Semiconductor Inc.
Series -
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-251-3
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