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Analog Power Inc. AMTP65H150G4PS

Part No.:
AMTP65H150G4PS
Manufacturer:
Analog Power Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Description:
GAN FET N-CH 650V TO-220
Quantity:

Unit Price:$0

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AMTP65H150G4PS Information

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Manufacturer:
Analog Power Inc.
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 6 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
598 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Image AMTP65H150G4PS
Part Number AMTP65H150G4PS
Manufacturer Analog Power Inc.
Series -
Package/Case TO-220-3
Packaging Tube
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 6 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
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