APSEMI AC2M0280120D

Product attributes

Attribute value

Manufacturer:

APSEMI

Series:

*

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

11A

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

370mOhm @ 6A, 20V

Vgs(th) (Max) @ Id:

4V @ 1.25mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

69.4W (Tc)

Operating Temperature:

-55°C ~ 150°C

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-3