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Infineon Technologies IRF7341TRPBF

Part No.:
IRF7341TRPBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET 2N-CH 55V 4.7A 8SO
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IRF7341TRPBF Information

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Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
55V
Current - Continuous Drain (Id) @ 25°C:
4.7A
Rds On (Max) @ Id, Vgs:
50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
740pF @ 25V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Image IRF7341TRPBFXTMA1 IRF7341TRPBF
Part Number IRF7341TRPBFXTMA1 IRF7341TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET®
Package/Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 55V 55V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) 4.7A
Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V 740pF @ 25V
Power - Max 2W (Tc) 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-DSO-8-902 8-SO
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