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Toshiba Semiconductor and Storage SSM6N7002KFU,LF

Part No.:
SSM6N7002KFU,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Description:
MOSFET 2N-CH 60V 0.3A US6
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Unit Price:$0

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SSM6N7002KFU,LF Information

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Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
300mA
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
40pF @ 10V
Power - Max:
285mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
US6
Image SSM6N7002KFU,LF SSM6N7002KFU,LXH
Part Number SSM6N7002KFU,LF SSM6N7002KFU,LXH
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series - U-MOSVII-H
Package/Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature - -
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 300mA 300mA (Ta)
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 10V 1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V 40pF @ 10V
Power - Max 285mW 285mW (Ta)
Operating Temperature 150°C (TJ) 150°C
Grade - Automotive
Qualification - AEC-Q101
Mounting Type Surface Mount Surface Mount
Supplier Device Package US6 US6
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