Toshiba Semiconductor and Storage SSM6L56FE,LM

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

SOT-563, SOT-666

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

Logic Level Gate, 1.5V Drive

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

800mA (Ta)

Rds On (Max) @ Id, Vgs:

235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

55pF @ 10V, 100pF @ 10V

Power - Max:

150mW (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

ES6