Infineon Technologies IRF7341TRPBFXTMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

4.7A (Tc)

Rds On (Max) @ Id, Vgs:

50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

36nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

740pF @ 25V

Power - Max:

2W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-DSO-8-902