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EPC EPC2110
- Part No.:
- EPC2110
- Manufacturer:
- EPC
- Category:
- FET, MOSFET Arrays
- Package:
- Die
- Description:
- MOSFET 2N-CH 120V 3.4A DIE
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
EPC2110 Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- EPC
- Series:
- eGaN®
- Package/Case:
- Die
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- GaNFET (Gallium Nitride)
- Configuration:
- 2 N-Channel (Dual) Common Source
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 120V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 80pF @ 60V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- Die
| Image |  |
|
| Part Number | EPC2110 | EPC2110ENGRT |
| Manufacturer | EPC | EPC |
| Series | eGaN® | eGaN® |
| Package/Case | Die | Die |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Product Status | Active | Obsolete |
| Technology | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Dual) Common Source | 2 N-Channel (Dual) Common Source |
| FET Feature | - | - |
| Drain to Source Voltage (Vdss) | 120V | 120V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A | 3.4A |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V | 60mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA | 2.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V | 80pF @ 60V |
| Power - Max | - | - |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | - | Surface Mount |
| Supplier Device Package | Die | Die |
- Include Parts
- Popular Search
The following parts include "EPC2110" in Silicon Labs EPC2110.
- Part Number
- Manufacturer
- Package
- Description
- SSM6N7002KFU,LF Toshiba Semiconductor and Storage 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.3A US6
- 2N7002DW-7-F Diodes Incorporated 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.23A SOT363
- SSM6L56FE,LM Toshiba Semiconductor and Storage SOT-563, SOT-666 MOSFET N/P-CH 20V 0.8A ES6
- SSM6N37FU,LF Toshiba Semiconductor and Storage 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 20V 0.25A US6
- 2N7002DWH6327XTSA1 Infineon Technologies 6-VSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.3A SOT363
- 2N7002BKS,115 Nexperia USA Inc. 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.3A 6TSSOP
- DMG1016UDW-7 Diodes Incorporated 6-TSSOP, SC-88, SOT-363 MOSFET N/P-CH 20V SOT363
- UM6K33NTN Rohm Semiconductor 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 50V 0.2A UMT6
- DMG6602SVT-7 Diodes Incorporated SOT-23-6 Thin, TSOT-23-6 MOSFET N/P-CH 30V 3.4A TSOT26
- EM6K34T2CR Rohm Semiconductor SOT-563, SOT-666 MOSFET 2N-CH 50V 0.2A EMT6
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