EPC EPC2110ENGRT

Product attributes

Attribute value

Manufacturer:

EPC

Series:

eGaN®

Package/Case:

Die

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

GaNFET (Gallium Nitride)

Configuration:

2 N-Channel (Dual) Common Source

FET Feature:

-

Drain to Source Voltage (Vdss):

120V

Current - Continuous Drain (Id) @ 25°C:

3.4A

Rds On (Max) @ Id, Vgs:

60mOhm @ 4A, 5V

Vgs(th) (Max) @ Id:

2.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:

0.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds:

80pF @ 60V

Power - Max:

-

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die