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EPC EPC2100

Part No.:
EPC2100
Manufacturer:
EPC
Category:
FET, MOSFET Arrays
Package:
Die
Description:
MOSFET 2N-CH 30V 10A DIE
Quantity:

Unit Price:$0

Ext Price:$0

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EPC2100 Information

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Product attributes
Attribute value
Manufacturer:
EPC
Series:
eGaN®
Package/Case:
Die
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
GaNFET (Gallium Nitride)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs:
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:
2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs:
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:
475pF @ 15V, 1960pF @ 15V
Power - Max:
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Image EPC2100 EPC2100ENGRT
Part Number EPC2100 EPC2100ENGRT
Manufacturer EPC EPC
Series eGaN® eGaN®
Package/Case Die Die
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Obsolete
Technology GaNFET (Gallium Nitride) GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge)
FET Feature - -
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta) 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V 475pF @ 15V, 1960pF @ 15V
Power - Max - -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package Die Die
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