EPC EPC2100ENGRT

Product attributes

Attribute value

Manufacturer:

EPC

Series:

eGaN®

Package/Case:

Die

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

GaNFET (Gallium Nitride)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 40A (Ta)

Rds On (Max) @ Id, Vgs:

8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V

Vgs(th) (Max) @ Id:

2.5V @ 4mA, 2.5V @ 16mA

Gate Charge (Qg) (Max) @ Vgs:

4.9nC @ 15V, 19nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds:

475pF @ 15V, 1960pF @ 15V

Power - Max:

-

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die