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YAGEO XSEMI XP3C023AMT

Part No.:
XP3C023AMT
Manufacturer:
YAGEO XSEMI
Category:
FET, MOSFET Arrays
Package:
8-PowerLDFN
Description:
MOSFET N/P-CH 30V 12A PMPAK
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XP3C023AMT Information

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Manufacturer:
YAGEO XSEMI
Series:
XP3C023A
Package/Case:
8-PowerLDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 10A (Ta)
Rds On (Max) @ Id, Vgs:
10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
19.2nC @ 4.5V, 21.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
2320pF @ 15V, 2480pF @ 15V
Power - Max:
3.57W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PMPAK® 5 x 6
Image XP3C023AMT
Part Number XP3C023AMT
Manufacturer YAGEO XSEMI
Series XP3C023A
Package/Case 8-PowerLDFN
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 10A (Ta)
Rds On (Max) @ Id, Vgs 10.4mOhm @ 10A, 10V, 23.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19.2nC @ 4.5V, 21.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2320pF @ 15V, 2480pF @ 15V
Power - Max 3.57W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PMPAK® 5 x 6
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