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YAGEO XSEMI XP10C150M

Part No.:
XP10C150M
Manufacturer:
YAGEO XSEMI
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
MOSFET N/P-CH 100V 2.5A 8SO
Quantity:

Unit Price:$0

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XP10C150M Information

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Manufacturer:
YAGEO XSEMI
Series:
XP10C150
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Rds On (Max) @ Id, Vgs:
150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17.6nC @ 10V, 51.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
960pF @ 50V, 3040pF @ 50V
Power - Max:
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Image XP10C150M
Part Number XP10C150M
Manufacturer YAGEO XSEMI
Series XP10C150
Package/Case 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Rds On (Max) @ Id, Vgs 150mOhm @ 2A, 10V, 160mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.6nC @ 10V, 51.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 50V, 3040pF @ 50V
Power - Max 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SO
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