Vishay Siliconix VQ1001P-E3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

-

Package/Case:

-

Packaging:

Tube

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

4 N-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

830mA

Rds On (Max) @ Id, Vgs:

1.75Ohm @ 200mA, 5V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

110pF @ 15V

Power - Max:

2W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

14-DIP