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Microchip Technology VN0606L-G

Part No.:
VN0606L-G
Manufacturer:
Microchip Technology
Category:
FETs, MOSFETs
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
MOSFET N-CH 60V 330MA TO92-3
Quantity:

Unit Price:$0

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VN0606L-G Information

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Manufacturer:
Microchip Technology
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA)
Packaging:
Bag
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
330mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3
Image VN0606L-G VN0606L-G-P003
Part Number VN0606L-G VN0606L-G-P003
Manufacturer Microchip Technology Microchip Technology
Series - -
Package/Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging Bag Tape & Reel (TR)
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 330mA (Tj) 330mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1A, 10V 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Tc) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
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