IXYS VMM650-01F

Product attributes

Attribute value

Manufacturer:

IXYS

Series:

HiPerFET™

Package/Case:

Y3-Li

Packaging:

Box

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

680A

Rds On (Max) @ Id, Vgs:

2.2mOhm @ 500A, 10V

Vgs(th) (Max) @ Id:

4V @ 30mA

Gate Charge (Qg) (Max) @ Vgs:

1440nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

Y3-Li