Taiwan Semiconductor Corporation TSM6502CR

Product attributes

Attribute value

Manufacturer:

Taiwan Semiconductor Corporation

Series:

-

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc), 18A (Tc)

Rds On (Max) @ Id, Vgs:

34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

10.3nC @ 4.5V, 9.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

1159pF @ 30V, 930pF @ 30V

Power - Max:

40W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-PDFN (5x6)