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Taiwan Semiconductor Corporation TSM300NB06DCR RLG

Part No.:
TSM300NB06DCR RLG
Manufacturer:
Taiwan Semiconductor Corporation
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Description:
MOSFET 2N-CH 60V 6A 8PDFN
Quantity:

Unit Price:$0

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TSM300NB06DCR RLG Information

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Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs:
30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1079pF @ 30V
Power - Max:
2W (Ta), 40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PDFN (5x6)
Image TSM300NB06DCR RLG
Part Number TSM300NB06DCR RLG
Manufacturer Taiwan Semiconductor Corporation
Series -
Package/Case 8-PowerTDFN
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1079pF @ 30V
Power - Max 2W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
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