Taiwan Semiconductor Corporation TSM2537CQ

Product attributes

Attribute value

Manufacturer:

Taiwan Semiconductor Corporation

Series:

-

Package/Case:

6-VDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

Logic Level Gate, 1.8V Drive

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

11.6A (Tc), 9A (Tc)

Rds On (Max) @ Id, Vgs:

30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

9.1nC @ 4.5V, 9.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

677pF @ 10V, 744pF @ 10V

Power - Max:

6.25W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-TDFN (2x2)