Transphorm TPD3215M

Product attributes

Attribute value

Manufacturer:

Transphorm

Series:

-

Package/Case:

Module

Packaging:

Bulk

Product Status:

Obsolete

Technology:

GaNFET (Gallium Nitride)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

70A (Tc)

Rds On (Max) @ Id, Vgs:

34mOhm @ 30A, 8V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

28nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds:

2260pF @ 100V

Power - Max:

470W

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

Module