Toshiba Semiconductor and Storage TPC8227-H,LQ

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSVI-H

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Bulk

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

5.1A

Rds On (Max) @ Id, Vgs:

33mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id:

2.3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

10nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

640pF @ 10V

Power - Max:

1.5W (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP