Microchip Technology TP5335MF-G-VAO

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

-

Package/Case:

6-VDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

350 V

Current - Continuous Drain (Id) @ 25°C:

85mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

30Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id:

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

110 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

360mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q100

Mounting Type:

Surface Mount

Supplier Device Package:

6-DFN (2x2)