Toshiba Semiconductor and Storage SSM6N815R,LF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSVIII-H

Package/Case:

6-SMD, Flat Leads

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate, 4V Drive

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

2A (Ta)

Rds On (Max) @ Id, Vgs:

103mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

3.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

290pF @ 15V

Power - Max:

1.8W (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP-F