Toshiba Semiconductor and Storage SSM6N57NU,LF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

6-WDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

4A

Rds On (Max) @ Id, Vgs:

46mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

310pF @ 10V

Power - Max:

1W

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-µDFN (2x2)