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Toshiba Semiconductor and Storage SSM6N43FU,LF

Part No.:
SSM6N43FU,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Description:
MOSFET 2N-CH 20V 0.5A US6
Quantity:

Unit Price:$0

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SSM6N43FU,LF Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
500mA
Rds On (Max) @ Id, Vgs:
630mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id:
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds:
46pF @ 10V
Power - Max:
200mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
US6
Image SSM6N43FU,LF
Part Number SSM6N43FU,LF
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 500mA
Rds On (Max) @ Id, Vgs 630mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 10V
Power - Max 200mW
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package US6
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