Toshiba Semiconductor and Storage SSM6N35AFE,LF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

SOT-563, SOT-666

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

Logic Level Gate, 1.2V Drive

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

250mA (Ta)

Rds On (Max) @ Id, Vgs:

1.1Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id:

1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

0.34nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

36pF @ 10V

Power - Max:

250mW

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

ES6