Toshiba Semiconductor and Storage SSM6L820R,LXHF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

6-SMD, Flat Leads

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

30V, 20V

Current - Continuous Drain (Id) @ 25°C:

4A (Ta)

Rds On (Max) @ Id, Vgs:

39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:

1V @ 1mA, 1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

3.2nC @ 4.5V, 6.7nC @4.5V

Input Capacitance (Ciss) (Max) @ Vds:

310pF @ 15V, 480pF @ 10V

Power - Max:

1.4W (Ta)

Operating Temperature:

150°C

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP-F