Toshiba Semiconductor and Storage SSM6L35FU(TE85L,F)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

6-TSSOP, SC-88, SOT-363

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

Logic Level Gate, 1.2V Drive

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

180mA, 100mA

Rds On (Max) @ Id, Vgs:

3Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

9.5pF @ 3V

Power - Max:

200mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

US6