Toshiba Semiconductor and Storage SSM6L16FETE85LF

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

SOT-563, SOT-666

Packaging:

Tape & Reel (TR)

Product Status:

Not For New Designs

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

100mA

Rds On (Max) @ Id, Vgs:

3Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id:

1.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

9.3pF @ 3V

Power - Max:

150mW

Operating Temperature:

150°C (TA)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

ES6