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Toshiba Semiconductor and Storage SSM6L09FUTE85LF

Part No.:
SSM6L09FUTE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Description:
MOSFET N/P-CH 30V 0.4A US6
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SSM6L09FUTE85LF Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
400mA, 200mA
Rds On (Max) @ Id, Vgs:
700mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id:
1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
20pF @ 5V
Power - Max:
300mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
US6
Image SSM6L09FUTE85LF
Part Number SSM6L09FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR)
Product Status Not For New Designs
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 400mA, 200mA
Rds On (Max) @ Id, Vgs 700mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id 1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 5V
Power - Max 300mW
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package US6
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