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Vishay Siliconix SQS142ENW-T1_GE3

Part No.:
SQS142ENW-T1_GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® 1212-8SLW
Description:
AUTOMOTIVE N-CHANNEL 40 V (D-S)
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SQS142ENW-T1_GE3 Information

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Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET® Gen IV
Package/Case:
PowerPAK® 1212-8SLW
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1952 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
113W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerPAK® 1212-8SLW
Image SQS142ENW-T1_GE3
Part Number SQS142ENW-T1_GE3
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Package/Case PowerPAK® 1212-8SLW
Packaging Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1952 pF @ 25 V
FET Feature -
Power Dissipation (Max) 113W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerPAK® 1212-8SLW
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