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Vishay Siliconix SQ3585EV-T1_GE3

Part No.:
SQ3585EV-T1_GE3
Manufacturer:
Vishay Siliconix
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET N/P-CH 20V 3.57A 6TSOP
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SQ3585EV-T1_GE3 Information

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Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs:
77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V, 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
1.67W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Image SQ3585EV-T1_GE3
Part Number SQ3585EV-T1_GE3
Manufacturer Vishay Siliconix
Series TrenchFET®
Package/Case SOT-23-6 Thin, TSOT-23-6
Packaging Tape & Reel (TR)
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V, 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.67W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
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