Vishay Siliconix SIZF640DT-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET® Gen IV

Package/Case:

8-PowerDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

41A (Ta), 159A (Tc)

Rds On (Max) @ Id, Vgs:

1.37mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

106nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

5750pF @ 20V

Power - Max:

4.2W (Ta), 62.5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAIR® 6x5FS